Influence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties

The authors would like to thank Professor David J Barber (University of Essex) for his helpful discussions and critical reading of this manuscript, and Engineer José Santos for technical support at Thin Film Laboratory.

Bibliographic Details
Main Author: Vieira, E. M. F. (author)
Other Authors: Martín-Sánchez, J. (author), Roldan, M. A. (author), Varela, M. (author), Buljan, Maja (author), Bernstorff, Sigrid (author), Barradas, Nuno P. (author), Franco, Nuno (author), Correia, M. R. (author), Rolo, Anabela G. (author), Pennycook, S. J. (author), Molina, S. I. (author), Alves, Eduardo (author), Chahboun, A. (author), Gomes, M. J. M. (author)
Format: article
Language:eng
Published: 2013
Subjects:
SiGe
Nanocrystals
Raman
RBS
GISAXS
Multi-layer films
HRTEM
XRR
Magnetron sputtering deposition
HAADF-STEM
EELS
Photoluminescence (PL)
Science & Technology
Online Access:https://hdl.handle.net/1822/27466
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/27466

Internet

https://hdl.handle.net/1822/27466

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