Influence of RF-sputtering power on formation of vertically stacked Si1−xGex nanocrystals between ultra-thin amorphous Al2O3 layers: structural and photoluminescence properties

The authors would like to thank Professor David J Barber (University of Essex) for his helpful discussions and critical reading of this manuscript, and Engineer José Santos for technical support at Thin Film Laboratory.

Detalhes bibliográficos
Autor principal: Vieira, E. M. F. (author)
Outros Autores: Martín-Sánchez, J. (author), Roldan, M. A. (author), Varela, M. (author), Buljan, Maja (author), Bernstorff, Sigrid (author), Barradas, Nuno P. (author), Franco, Nuno (author), Correia, M. R. (author), Rolo, Anabela G. (author), Pennycook, S. J. (author), Molina, S. I. (author), Alves, Eduardo (author), Chahboun, A. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2013
Assuntos:
SiGe
Nanocrystals
Raman
RBS
GISAXS
Multi-layer films
HRTEM
XRR
Magnetron sputtering deposition
HAADF-STEM
EELS
Photoluminescence (PL)
Science & Technology
Texto completo:https://hdl.handle.net/1822/27466
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/27466

Texto Completo

https://hdl.handle.net/1822/27466

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