Structural and optical characterisation of Eu implanted AlxGa1-xN

AlxGa1−xN films grown on sapphire substrates with AlN contents from 0 to 100% were implanted with 8 × 1014 at/cm2 Eu ions. The structural properties and damage accumulation were studied by Rutherford backscattering and channelling spectrometry. The implantation damage decreases considerably for all...

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Bibliographic Details
Main Author: Lorenz, K. (author)
Other Authors: Alves, E. (author), Monteiro, T. (author), Cruz, A. (author), Peres, M. (author)
Format: article
Language:eng
Published: 2007
Subjects:
Aluminum gallium nitride
Rare earth
Implantation
Rutherford backscattering spectrometry
Photoluminescence
Online Access:http://hdl.handle.net/10773/6147
Country:Portugal
Oai:oai:ria.ua.pt:10773/6147

Internet

http://hdl.handle.net/10773/6147

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