Structural and optical characterisation of Eu implanted AlxGa1-xN
AlxGa1−xN films grown on sapphire substrates with AlN contents from 0 to 100% were implanted with 8 × 1014 at/cm2 Eu ions. The structural properties and damage accumulation were studied by Rutherford backscattering and channelling spectrometry. The implantation damage decreases considerably for all...
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| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2007
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/6147 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6147 |