Modeling electrical characteristics of thin-film field-effect transistors III. Normally-on devices
The thin-film field-effect-transistor model recently developed is applied to devices based on materials that already show current even without a bias present at the gate resulting in so-called normally-on transistors. These fall in three categories: (i) narrow-band-gap semiconductors, where the ther...
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6622 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6622 |