2.2 eV luminescence in GaN

The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombinat...

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Bibliographic Details
Main Author: Hofmann, D. M. (author)
Other Authors: Kovalev, D. (author), Steude, G. (author), Volm, D. (author), Meyer, B. K. (author), Xavier, C. (author), Monteiro, T. (author), Pereira, E. (author), Mokov, E. N. (author), Amano, H. (author), Akasaki, I. (author)
Format: conferenceObject
Language:eng
Published: 1000
Subjects:
Crystal defects
Epitaxial growth
Luminescence
Magnetic resonance
Mathematical models
Metallorganic vapor phase epitaxy
Sapphire
Photoluminescence
Silicon carbide
Spectroscopy
Substrates
Online Access:http://hdl.handle.net/10773/15993
Country:Portugal
Oai:oai:ria.ua.pt:10773/15993

Internet

http://hdl.handle.net/10773/15993

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