2.2 eV luminescence in GaN

The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation method on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombinat...

ver descrição completa

Detalhes bibliográficos
Autor principal: Hofmann, D. M. (author)
Outros Autores: Kovalev, D. (author), Steude, G. (author), Volm, D. (author), Meyer, B. K. (author), Xavier, C. (author), Monteiro, T. (author), Pereira, E. (author), Mokov, E. N. (author), Amano, H. (author), Akasaki, I. (author)
Formato: conferenceObject
Idioma:eng
Publicado em: 1000
Assuntos:
Crystal defects
Epitaxial growth
Luminescence
Magnetic resonance
Mathematical models
Metallorganic vapor phase epitaxy
Sapphire
Photoluminescence
Silicon carbide
Spectroscopy
Substrates
Texto completo:http://hdl.handle.net/10773/15993
País:Portugal
Oai:oai:ria.ua.pt:10773/15993

Texto Completo

http://hdl.handle.net/10773/15993

Registos relacionados