Impact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures
In the present work, the effect of the ferroelectric layer thickness on the resistive switching (RS) characteristics of 0.5 Ba(Zr0.2Ti0.8)O3-0.5 (Ba0.7Ca0.3)TiO3 (BCZT)/HfO2:Al2O3 (HAO) structures deposited on Pt-Si substrates in a metal-dielectric-ferroelectric-metal configuration is investigated. T...
| Autor principal: | |
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| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2018
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/1822/57391 |
| País: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/57391 |