Impact of the ferroelectric layer thickness on the resistive switching characteristics of ferroelectric/dielectric structures

In the present work, the effect of the ferroelectric layer thickness on the resistive switching (RS) characteristics of 0.5 Ba(Zr0.2Ti0.8)O3-0.5 (Ba0.7Ca0.3)TiO3 (BCZT)/HfO2:Al2O3 (HAO) structures deposited on Pt-Si substrates in a metal-dielectric-ferroelectric-metal configuration is investigated. T...

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Bibliographic Details
Main Author: Silva, J. M. B. (author)
Other Authors: Silva, José Pedro Basto (author), Sekhar, K. C. (author), Pereira, Mário (author), Gomes, M. J. M. (author)
Format: article
Language:eng
Published: 2018
Subjects:
Ciências Naturais::Ciências Físicas
Science & Technology
Online Access:http://hdl.handle.net/1822/57391
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/57391

Internet

http://hdl.handle.net/1822/57391

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