Structural study of Si1-xGex nanocrystals embedded in SiO2 films

We have investigated the structural properties of Si1−xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy,...

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Detalhes bibliográficos
Autor principal: Pinto, S. R. C. (author)
Outros Autores: Kashtiban, R. J. (author), Rolo, Anabela G. (author), Buljan, M. (author), Chahboun, A. (author), Bangert, U. (author), Barradas, N. P. (author), Alves, E. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2010
Assuntos:
Si1−xGex
Nanocrystals
SiO2
HRTEM
GISAXS
Raman
Flash memory
Semiconductor
Si Ge 1 - x x
Science & Technology
Texto completo:http://hdl.handle.net/1822/13730
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/13730

Texto Completo

http://hdl.handle.net/1822/13730

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