Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy
SiO2 films containing small particles of Ge were grown using the r.f.-magnetron sputtering technique. The films were studied by means of X-ray diffraction (XRD) and Raman spectroscopy. XRD studies revealed diamond structure of Ge particles in the films grown at temperatures higher than 500ºC. The de...
| Autor principal: | |
|---|---|
| Outros Autores: | , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
1998
|
| Assuntos: | |
| Texto completo: | http://hdl.handle.net/1822/14279 |
| País: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/14279 |