Stability and luminescence studies of Tm and Er implanted ZnO single crystals

Zinc oxide single crystals were implanted with Tm and Er ions in a wide range of fluences. For both types of ions RBS/channeling shows for the as-implanted state the same minimum yield as for the host. Damage recovery becomes significant for annealing above 750 °C and is almost complete at 1050 °C....

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Detalhes bibliográficos
Autor principal: Rita, E. (author)
Outros Autores: Alves, E. (author), Wahl, U. (author), Correia, J.G. (author), Monteiro, T. (author), Soares, M.J. (author), Neves, A. (author), Peres, M. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Photoluminescence
RBS/channelling
RE doping
ZnO single crystals
Texto completo:http://hdl.handle.net/10773/6697
País:Portugal
Oai:oai:ria.ua.pt:10773/6697

Texto Completo

http://hdl.handle.net/10773/6697

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