Ion beam studies of MBE grown GaN films on (1 1 1) silicon substrates

GaN epitaxial films were grown on silicon substrates by molecular beam epitaxy under different conditions. Some of the films were doped with the rare earths (RE) Er, Eu or Tm during the growth, and were studied regarding its composition and crystalline quality. The Rutherford backscattering/channell...

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Bibliographic Details
Main Author: Alves, E. (author)
Other Authors: Barradas, N.P. (author), Monteiro, T. (author), Correia, R. (author), Kreissig, U. (author)
Format: article
Language:eng
Published: 1000
Subjects:
ERDA
GaN epilayers
RBS/channelling
RE luminescence
Online Access:http://hdl.handle.net/10773/6708
Country:Portugal
Oai:oai:ria.ua.pt:10773/6708

Internet

http://hdl.handle.net/10773/6708

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