Ion beam studies of MBE grown GaN films on (1 1 1) silicon substrates
GaN epitaxial films were grown on silicon substrates by molecular beam epitaxy under different conditions. Some of the films were doped with the rare earths (RE) Er, Eu or Tm during the growth, and were studied regarding its composition and crystalline quality. The Rutherford backscattering/channell...
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| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/6708 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6708 |