Photocapacitance measurements in irradiated a-Si:H based detectors

Photocapacitance measurements were performed on amorphous silicon p–i–n detectors before and after particle irradiation with 1.5 MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning lase...

ver descrição completa

Detalhes bibliográficos
Autor principal: Schwarz, R. (author)
Outros Autores: Mardolcar, U. (author), Vygranenko, Y. (author), Vieira, M. (author), Casteleiro, C. (author), Stallinga, Peter (author), Gomes, Henrique L. (author)
Formato: article
Idioma:eng
Publicado em: 2014
Assuntos:
Silicon
Radiation
Sensors
Defects
Texto completo:http://hdl.handle.net/10400.1/3301
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3301
Descrição
Resumo:Photocapacitance measurements were performed on amorphous silicon p–i–n detectors before and after particle irradiation with 1.5 MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning laser beam. We monitored the transient capacitance after applying short laser pulses to deduce trap energies of 0.64 eV. Photocapacitance measurements as a function of the applied bias, the measurement frequency up to 1 MHz, and the wavelength of laser light are discussed. The reduction in photocapacitance signal and the shift of the cut-off frequency after ion bombardment are correlated with the change in transport properties.

Registros relacionados