Photocapacitance measurements in irradiated a-Si:H based detectors

Photocapacitance measurements were performed on amorphous silicon p–i–n detectors before and after particle irradiation with 1.5 MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning lase...

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Bibliographic Details
Main Author: Schwarz, R. (author)
Other Authors: Mardolcar, U. (author), Vygranenko, Y. (author), Vieira, M. (author), Casteleiro, C. (author), Stallinga, Peter (author), Gomes, Henrique L. (author)
Format: article
Language:eng
Published: 2014
Subjects:
Silicon
Radiation
Sensors
Defects
Online Access:http://hdl.handle.net/10400.1/3301
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3301
Description
Summary:Photocapacitance measurements were performed on amorphous silicon p–i–n detectors before and after particle irradiation with 1.5 MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning laser beam. We monitored the transient capacitance after applying short laser pulses to deduce trap energies of 0.64 eV. Photocapacitance measurements as a function of the applied bias, the measurement frequency up to 1 MHz, and the wavelength of laser light are discussed. The reduction in photocapacitance signal and the shift of the cut-off frequency after ion bombardment are correlated with the change in transport properties.

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