Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers

The effect of strain on the compositional and optical properties of a set of epitaxial single layers of InxGa12xN was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffra...

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Bibliographic Details
Main Author: Pereira, S. (author)
Other Authors: Correia, M.R. (author), Monteiro, T. (author), Pereira, E. (author), Alves, E. (author), Sequeira, A.D. (author), Franco, N. (author)
Format: article
Language:eng
Published: 2012
Subjects:
Indium compounds
Gallium compounds
III-V semiconductors
Wide band gap semiconductors
Semiconductor epitaxial layers
Energy gap
Optical constants
Stoichiometry
Rutherford backscattering
Light absorption
Online Access:http://hdl.handle.net/10773/6162
Country:Portugal
Oai:oai:ria.ua.pt:10773/6162

Internet

http://hdl.handle.net/10773/6162

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