Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers

The effect of strain on the compositional and optical properties of a set of epitaxial single layers of InxGa12xN was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffra...

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Detalhes bibliográficos
Autor principal: Pereira, S. (author)
Outros Autores: Correia, M.R. (author), Monteiro, T. (author), Pereira, E. (author), Alves, E. (author), Sequeira, A.D. (author), Franco, N. (author)
Formato: article
Idioma:eng
Publicado em: 2012
Assuntos:
Indium compounds
Gallium compounds
III-V semiconductors
Wide band gap semiconductors
Semiconductor epitaxial layers
Energy gap
Optical constants
Stoichiometry
Rutherford backscattering
Light absorption
Texto completo:http://hdl.handle.net/10773/6162
País:Portugal
Oai:oai:ria.ua.pt:10773/6162

Texto Completo

http://hdl.handle.net/10773/6162

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