Electrical instabilities in organic semiconductors caused by trapped supercooled water
It is reported that the electrical instability known as bias stress is caused by the presence of trapped water in the organic layer. Experimental evidence as provided by the observation of an anomaly occurring systematically at around 200 K. This anomaly is observed in a variety of materials, indepe...
| Autor principal: | |
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| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6613 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6613 |