Influence of CdS and ZnSnO buffer layers on the photoluminescence of Cu(In,Ga)Se 2 thin films

The search for alternatives to the CdS buffer layer in Cu(In,Ga)Se 2 (CIGS) solar cells has turned out to be quite promising in terms of power conversion efficiency. In this paper, the typically used chemical-bath-deposited CdS layer is compared with an atomic-layer-deposited Zn 1-x Sn x O y (ZnSnO)...

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Detalhes bibliográficos
Autor principal: Salomé, Pedro M. P. (author)
Outros Autores: Teixeira, Jennifer P. (author), Keller, Jan (author), Törndahl, Tobias (author), Sadewasser, Sascha (author), Leitão, Joaquim P. (author)
Formato: article
Idioma:eng
Publicado em: 2021
Assuntos:
Cu(In,Ga)Se 2 (CIGS)
Zn1-xSnxOy buffer layer
CdS buffer layer
Photoluminescence
Thin-film solar cells
Texto completo:http://hdl.handle.net/10773/30566
País:Portugal
Oai:oai:ria.ua.pt:10773/30566

Texto Completo

http://hdl.handle.net/10773/30566

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