Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN

Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. W...

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Detalhes bibliográficos
Autor principal: Seitz, R. (author)
Outros Autores: Gaspar, C. (author), Monteiro, T. (author), Pereira, E. (author), Leroux, M. (author), Beaumont, B. (author), Gibart, P. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
GaN
Mid-band-gap emissions
Si-doping
Time resolved luminescence
Electron emission
Electron spectroscopy
Electron transitions
Energy gap
Luminescence of solids
Semiconductor doping
Silicon
Time resolved spectroscopy
Semiconducting gallium compounds
Texto completo:http://hdl.handle.net/10773/6632
País:Portugal
Oai:oai:ria.ua.pt:10773/6632

Texto Completo

http://hdl.handle.net/10773/6632

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