Semiconductive properties of anodic niobium oxides
The semiconductive properties of anodic niobium oxides formed at constant potential and constant current density to different final voltages have been examined by Mott-Schottky analysis. Thin anodic oxides were formed on sputtered niobium specimens at constant potential in the range of 2.5 to 10 V A...
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| Outros Autores: | , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2006
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| Assuntos: | |
| Texto completo: | http://scielo.pt/scielo.php?script=sci_arttext&pid=S0872-19042006000200012 |
| País: | Portugal |
| Oai: | oai:scielo:S0872-19042006000200012 |