Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p-i-n particle detectors

Thick large-area particle or X-ray detectors suffer degradation during operation due to creation of defects that act as deep traps. Measuring the photocurrent under homogeneously absorbed weak light can monitor variation in detector performance. We describe how photocapacitance can be used as an alt...

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Detalhes bibliográficos
Autor principal: Casteleiro, C. (author)
Outros Autores: Schwarz, R. (author), Mardolcar, U. (author), Maçarico, A. (author), Martins, J. (author), Vieira, M. (author), Wuensch, F. (author), Kunst, M. (author), Morgado, E. (author), Stallinga, Peter (author), Gomes, Henrique L. (author)
Formato: article
Idioma:eng
Publicado em: 2014
Assuntos:
Amorphous silicon detector
Photocapacitance
Radiation resistance
Texto completo:http://hdl.handle.net/10400.1/3302
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3302

Texto Completo

http://hdl.handle.net/10400.1/3302

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