Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p-i-n particle detectors

Thick large-area particle or X-ray detectors suffer degradation during operation due to creation of defects that act as deep traps. Measuring the photocurrent under homogeneously absorbed weak light can monitor variation in detector performance. We describe how photocapacitance can be used as an alt...

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Bibliographic Details
Main Author: Casteleiro, C. (author)
Other Authors: Schwarz, R. (author), Mardolcar, U. (author), Maçarico, A. (author), Martins, J. (author), Vieira, M. (author), Wuensch, F. (author), Kunst, M. (author), Morgado, E. (author), Stallinga, Peter (author), Gomes, Henrique L. (author)
Format: article
Language:eng
Published: 2014
Subjects:
Amorphous silicon detector
Photocapacitance
Radiation resistance
Online Access:http://hdl.handle.net/10400.1/3302
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3302

Internet

http://hdl.handle.net/10400.1/3302

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