Oxide transistors produced by solution: Influence of annealing parameters on properties of the insulator
Solution processing of amorphous metal oxides has been lately used as an option to implement in flexible electronics allowing to reduce the associated costs and get a better performance. However the research has focused more on semiconductor layer instead of focusing on the insulator layer that is r...
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| Formato: | masterThesis |
| Idioma: | eng |
| Publicado em: |
2017
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| Texto completo: | http://hdl.handle.net/10362/19799 |
| País: | Portugal |
| Oai: | oai:run.unl.pt:10362/19799 |