Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/Aluminium Nitride Superlattice

GaN/AIN structures made of GaN quantum dots (QDs) separated by AIN spacer layers, were doped with Europium by ion implantation. Rutherford Backscattering/Channelling measurements showed that Eu is incorporated mainly on near-substitutional cation sites within the superlattice region. Only slight det...

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Detalhes bibliográficos
Autor principal: Peres, M. (author)
Outros Autores: Neves, A.J. (author), Monteiro, T. (author), Magalhães, S. (author), Franco, N. (author), Lorenz, K. (author), Alves, E. (author), Damilano, B. (author), Massies, J. (author), Dussaigne, A. (author), Grandjean, N. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
GaN
Ion implantation
PL
PLE
Quantum dots
Rare earths
RBS
Texto completo:http://hdl.handle.net/10773/6687
País:Portugal
Oai:oai:ria.ua.pt:10773/6687

Texto Completo

http://hdl.handle.net/10773/6687

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