Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor
This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching...
| Autor principal: | |
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| Outros Autores: | , , , , |
| Formato: | conferenceObject |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6601 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6601 |