Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
The temperature effect on microcrystalline silicon (mc-Si:H) films produced by R.F. magnetron sputtering has been studied by Raman spectroscopy. The thermal behaviour of mc-Si:H films and crystalline silicon is compared and interpreted on the basis of anharmonic effects. We have studied the first or...
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
1999
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| Texto completo: | http://hdl.handle.net/1822/13771 |
| País: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/13771 |