The use of bismuth(III) dithiocarbamato complexes as precursors for the low-pressure MOCVD of Bi2S3
Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 prod...
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| Outros Autores: | , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2000
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/5950 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/5950 |