Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates
Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 degrees C). Film thicknesses in the range 10-120 nm were o...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2017
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/20459 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/20459 |