Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are imp...
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| Formato: | other article |
| Idioma: | eng |
| Publicado em: |
2018
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| Texto completo: | http://hdl.handle.net/10183/179258 |
| País: | Brasil |
| Oai: | oai:www.lume.ufrgs.br:10183/179258 |