Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities

The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs and GaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied in detail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL...

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Bibliographic Details
Main Author: Lourenço,S. A. (author)
Other Authors: Dias,I. F. L. (author), Duarte,J. L. (author), Laureto,E. (author), Aquino,V. M. (author), Harmand,J. C. (author)
Format: article
Language:eng
Published: 2007
Subjects:
Diluted III-N-V semiconductors
Photoluminescece
Quantum wells
Exciton localization
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332007000800004
Country:Brazil
Oai:oai:scielo:S0103-97332007000800004

Internet

http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332007000800004

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