Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities
The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs and GaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied in detail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL...
| Autor principal: | |
|---|---|
| Outros Autores: | , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2007
|
| Assuntos: | |
| Texto completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332007000800004 |
| País: | Brasil |
| Oai: | oai:scielo:S0103-97332007000800004 |