Electron-phonon scattering in graded quantum dots
Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different sc...
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| Outros Autores: | , , |
| Formato: | article |
| Publicado em: |
2010
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| Assuntos: | |
| Texto completo: | https://doi.org/https://dx.doi.org/10.1590/S0103-97332006000300037 |
| País: | Brasil |
| Oai: | oai:repositorio.unb.br:10482/6175 |
| Resumo: | Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation. Keywords: Theoretical calculations; Electron-phonon scattering; GaAs/AlxGa1¡xAs |
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