Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor w...

Full description

Bibliographic Details
Main Author: Castillo-Ojeda,Roberto Saúl (author)
Other Authors: Díaz-Reyes,Joel (author), Galván-Arellano,Miguel (author), Anda-Salazar,Francisco de (author), Contreras-Rascon,Jorge Indalecio (author), Peralta-Clara,María de la Cruz (author), Veloz-Rendón,Julieta Salomé (author)
Format: article
Language:eng
Published: 2017
Subjects:
Atomic Layer Deposition
nanolayers
X-ray diffraction
Raman scattering
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501179
Country:Brazil
Oai:oai:scielo:S1516-14392017000501179

Internet

http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501179

Similar Items