Structural Characterization of ZnTe Grown by Atomic-Layer-Deposition Regime on GaAs and GaSb (100) Oriented Substrates

This work presents the characterization of ZnTe nanolayers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor w...

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Detalhes bibliográficos
Autor principal: Castillo-Ojeda,Roberto Saúl (author)
Outros Autores: Díaz-Reyes,Joel (author), Galván-Arellano,Miguel (author), Anda-Salazar,Francisco de (author), Contreras-Rascon,Jorge Indalecio (author), Peralta-Clara,María de la Cruz (author), Veloz-Rendón,Julieta Salomé (author)
Formato: article
Idioma:eng
Publicado em: 2017
Assuntos:
Atomic Layer Deposition
nanolayers
X-ray diffraction
Raman scattering
Texto completo:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501179
País:Brasil
Oai:oai:scielo:S1516-14392017000501179

Texto Completo

http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501179

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