Electrical resistivity of bismuth implanted into silicon
We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior i...
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| Outros Autores: | , , |
| Formato: | other article |
| Idioma: | eng |
| Publicado em: |
2014
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10183/95365 |
| País: | Brasil |
| Oai: | oai:www.lume.ufrgs.br:10183/95365 |
| Resumo: | We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)<P(p)<p(As)<p(Bi). |
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