Electrical resistivity of bismuth implanted into silicon

We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior i...

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Bibliographic Details
Main Author: Silva, Antonio Ferreira da (author)
Other Authors: Sernelius, Bo E. (author), Souza, Joel Pereira de (author), Boudinov, Henri Ivanov (author)
Format: other article
Language:eng
Published: 2014
Subjects:
Física da matéria condensada
Condutividade elétrica
Implantação de íons
Impurezas
Dopagem de semicondutores
Online Access:http://hdl.handle.net/10183/95365
Country:Brazil
Oai:oai:www.lume.ufrgs.br:10183/95365

Internet

http://hdl.handle.net/10183/95365

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