Electrical activation of boron coimplanted with carbon in a silicon substrate
It is demonstratedt hat the electrical activation in B+ (5.0X 1014 cm-² at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times lower than that of B+ is not sufficient to influence the activation behavior...
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| Formato: | other article |
| Idioma: | eng |
| Publicado em: |
2014
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| Texto completo: | http://hdl.handle.net/10183/95351 |
| País: | Brasil |
| Oai: | oai:www.lume.ufrgs.br:10183/95351 |