Synthesis of GaN by N ion implantation in GaAs (001)
Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitat...
| Autor principal: | |
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| Outros Autores: | , , , , |
| Formato: | other article |
| Idioma: | eng |
| Publicado em: |
2016
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10183/140579 |
| País: | Brasil |
| Oai: | oai:www.lume.ufrgs.br:10183/140579 |