Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaN

Optical and transport data on GaN samples grown by low-temperature pulsed laser deposition are presented. Large below-gap band tails are observed in optical absorption spectroscopy. The most intense photoluminescence lines of medium crystalline quality samples can be attributed to excitons bounded t...

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Detalhes bibliográficos
Autor principal: Niehus, M. (author)
Outros Autores: Sanguino, P. (author), Schwarz, R. (author), Monteiro, T. (author), Soares, M.J. (author), Pereira, E. (author), Kunst, M. (author), Koyonov, S. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Crystalline quality
Excitation wavelength
Film/substrate interface
Low temperature photoluminescence
Microwave reflection
Photocurrent transients
Photoluminescence lines
Transient photoconductivity
Texto completo:http://hdl.handle.net/10773/11634
País:Portugal
Oai:oai:ria.ua.pt:10773/11634

Texto Completo

http://hdl.handle.net/10773/11634

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