Etchability Dependence of InO x and ITO Thin Films by Plasma Enhanced Reactive Thermal Evaporation on Structural Properties and Deposition Conditions

The authors gratefully acknowledge T. Duarte for the X-ray diffraction facilities, "Fundacao para a Ciencia e a Tecnologia" for funding through a pluriannual contract with CeFEMA (UID/CTM/04540/2013) and fellowship (SFRH/BPD/102217/2014) for financial support of this research.

Detalhes bibliográficos
Autor principal: Amaral, Ana (author)
Outros Autores: Lavareda, G. (author), Carvalho, C. Nunes de (author), André, V. (author), Vygranenko, Yuri (author), Fernandes, M. (author), Brogueira, Pedro (author)
Formato: article
Idioma:eng
Publicado em: 2019
Assuntos:
plasma deposition
thin film
transparent conductor
Mechanical Engineering
Mechanics of Materials
Materials Science(all)
Condensed Matter Physics
Texto completo:https://doi.org/10.1557/adv.2018.113
País:Portugal
Oai:oai:run.unl.pt:10362/66986

Texto Completo

https://doi.org/10.1557/adv.2018.113

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