High temperature annealing of Er implanted GaN

Defect recovery, optical activation and diffusion of Er implanted GaN epilayers grown on sapphire were studied after annealing at 1000°C with proximity cap and 1200°C under nitrogen atmosphere at high pressure (1GPa). The erbium ions with 160 keV were implanted at room temperature to nominal fluence...

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Detalhes bibliográficos
Autor principal: Alves, E. (author)
Outros Autores: Monteiro, T. (author), Soares, J. (author), Santos, L. (author), Silva, M.F.Da. (author), Soares, J.C. (author), Lojkowski, W. (author), Kolesnikov, D. (author), Vianden, R. (author), Correia, J.G. (author)
Formato: article
Idioma:eng
Publicado em: 2001
Assuntos:
GaN
Defect annealing
Er implantation
Optical activation
Texto completo:http://hdl.handle.net/10773/6196
País:Portugal
Oai:oai:ria.ua.pt:10773/6196

Texto Completo

http://hdl.handle.net/10773/6196

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