Bias-induced threshold voltages shifts in thin-film organic transistors

An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in a...

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Detalhes bibliográficos
Autor principal: Gomes, Henrique L. (author)
Outros Autores: Stallinga, Peter (author), Dinelli, F. (author), Murgia, M. (author), Biscarini, F. (author), De Leeuw, D. M. (author), Muck, T. (author), Geurts, J. (author), Molenkamp, L. W. (author), Wagner, V. (author)
Formato: article
Idioma:eng
Publicado em: 2015
Texto completo:http://hdl.handle.net/10400.1/6629
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/6629

Texto Completo

http://hdl.handle.net/10400.1/6629

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