Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10(17) m(-2). We explain the electrical...

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Bibliographic Details
Main Author: Bory, Benjamin F. (author)
Other Authors: Rocha, Paulo (author), Gomes, Henrique L. (author), de Leeuw, Dago M. (author), Meskers, Stefan C. J. (author)
Format: article
Language:eng
Published: 2018
Subjects:
Controlled negative-resistance
Oxide-films
Al-Al2O3-Au Diodes
Tunnel-junctions
Thin-films
1/F Noise
Devices
Fluctuations
States
Online Access:http://hdl.handle.net/10400.1/11771
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/11771

Internet

http://hdl.handle.net/10400.1/11771

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