Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon
Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10(17) m(-2). We explain the electrical...
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| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2018
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10400.1/11771 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/11771 |