Control of the deposition ratio of Bi2Te3 and Sb2Te3 in a vacuum evaporator for fabrication of Peltier elements

This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor press...

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Detalhes bibliográficos
Autor principal: Gonçalves, L. M. (author)
Outros Autores: Rocha, J. G. (author), Correia, J. H. (author), Couto, Carlos (author)
Formato: conferencePaper
Idioma:eng
Publicado em: 2006
Assuntos:
Co-evaporation
Compound
Deposition rate
PID
Peltier
Bismuth Telluride
Science & Technology
Texto completo:http://hdl.handle.net/1822/5559
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/5559
Descrição
Resumo:This article reports the main problem and the corresponding solution of the co-evaporation of Bi2Te3 and Sb2Te3 films for the fabrication of Peltier elements. This main problem consists in the control of the deposition rates of the two elements: Bi or Sb and Te, which have very different vapor pressures. The control of the deposition ratio was achieved by means of a PID controller, which permitted the fabrication of thin-film Peltier elements that produce a temperature gradient in the order of 2C between their hot and cold junctions, when measured at free air conditions.

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