Spin polarized state filter based on semiconductor-dielectric-iron-semiconductor multi-nanolayer device

Presently we report spin-polarized state transport in semiconductor-dielectric-iron-semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical...

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Bibliographic Details
Main Author: Makarov, Vladimir (author)
Other Authors: Khmelinskii, Igor (author)
Format: article
Language:eng
Published: 2018
Subjects:
Online Access:http://hdl.handle.net/10400.1/11091
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/11091
Description
Summary:Presently we report spin-polarized state transport in semiconductor-dielectric-iron-semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper. Published by Elsevier Ltd.