The oxidation behaviour of mixed tungsten silicon sputtered coatings
W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformatio...
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| Formato: | article |
| Idioma: | eng |
| Publicado em: |
1999
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| Texto completo: | http://hdl.handle.net/10316/4321 |
| País: | Portugal |
| Oai: | oai:estudogeral.sib.uc.pt:10316/4321 |
| Resumo: | W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings. |
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