Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

Gallium nitride (GaN) has gained a lot of attention due to its high range of applications as solid state light emitters and detectors. However, the nitride samples often evidence deep level optically active defects affecting their performance on the high energy spectral region. This is the case for...

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Detalhes bibliográficos
Autor principal: Rodrigues, J (author)
Outros Autores: Miranda, S.M.C (author), Fernandes, A.J.S (author), Nogales, E (author), Alves, L.C. (author), Alves, E. (author), Tourbot, G (author), Auzelle, T. (author), Daudin, B. (author), Méndez, B. (author), Trindade, T. (author), Lorenz, K (author), Costa, F.M (author), Monteiro, T. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
GaN
Yellow luminescence
Nanowires
Texto completo:http://hdl.handle.net/10773/11636
País:Portugal
Oai:oai:ria.ua.pt:10773/11636

Texto Completo

http://hdl.handle.net/10773/11636

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